Tunneling into the localized phase near Anderson transitions with Coulomb interaction
Abstract
We study the tunneling density of states (TDOS) of a disordered electronic system with Coulomb interaction on the insulating side of the Anderson localization transition. The average TDOS shows a critical behavior at high energies, with a crossover to a soft Coulomb gap Δ at low energies. We demonstrate that the single-particle excitations experience a localization transition (which belongs to the noninteracting universality class) at an energy E =±Ec. The mobility edge Ec scales with the distance μc-μ from the interacting critical point according to Ec∝(μc-μ)νz, where ν and z are the localization-length and the dynamical critical exponents. Local TDOS shows strong fluctuations and long-range correlations which reflect the multifractality associated with interacting and noninteracting fixed points as well the localization of low-energy excitations.
- Publication:
-
Physical Review B
- Pub Date:
- January 2014
- DOI:
- 10.1103/PhysRevB.89.035430
- arXiv:
- arXiv:1307.5811
- Bibcode:
- 2014PhRvB..89c5430B
- Keywords:
-
- 72.15.Rn;
- 71.30.+h;
- 73.43.Nq;
- Localization effects;
- Metal-insulator transitions and other electronic transitions;
- Quantum phase transitions;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 14 pages, 5 figures