Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene-hBN Heterostructures at Room Temperature
Abstract
We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10$\mu$m combined with carrier mobilities exceeding 20,000 cm$^2$/Vs.
- Publication:
-
Nano Letters
- Pub Date:
- November 2014
- DOI:
- 10.1021/nl501278c
- arXiv:
- arXiv:1406.2439
- Bibcode:
- 2014NanoL..14.6050D
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 15 pages, 5 figures