Low operating voltage n-channel organic field effect transistor using epoxy based photoresist gate dielectric
We report a systematic study on the dielectric properties of epoxy based positive tone photoresist and its use as a gate dielectric for n-channel organic field effect transistors (OFETs) made with N,N’-Dioctyl-3,4,9,10-perylenedicarboximinde (PTCDI-C8) as the active semiconducting layer. We find that the photoresist has high dielectric constant (k = 12 at 10 kHz) and thus can be used in fabricating low operating voltage OFET devices. Highly smooth gate dielectric surface was obtained using the photoresist with the highest root mean square (rms) roughness of 0.239 nm for the films annealed at 200 °C. Consequently, the semiconducting layer (on photoresist dielectric annealed at 100 °C) also exhibited highly uniform surface with rms roughness of 0.382 nm. The turn-on voltage (VT), inverse subthreshold slope (S) and saturation mobility of electrons (μsat) of the transistor device were estimated to be 4.3 V, 13 V decade-1 and 6 × 10-5 cm2 Vs-1, respectively, when the device was operated in ambient, which is better than some of the earlier reported works under similar experimental conditions.