Structural and dielectric properties of BaTiO3-Bi(Mg1/2Ti1/2)O3 thin films fabricated by chemical solution deposition
Thin films of the BaTiO3-Bi(Mg1/2Ti1/2)O3 (BT-BMT) solid-solution system were fabricated with the aim of achieving a stable temperature coefficient of capacitance (TCC) favorable for high-temperature electronics. A single perovskite phase with pseudocubic symmetry was obtained for the films fabricated by chemical solution deposition on (111)Pt/TiO2/(100)Si substrates in the composition range of x = 0-0.80 for (1 - x)BT-xBMT. BMT added to the BaTiO3-based films enhanced the crystallinity of the perovskite phase and resulted in saturated P-E hysteresis behavior with remanent polarization of up to 13 µC/cm2. BMT addition led to gradual dielectric relaxation, which also resulted in stable TCC behavior with a relative dielectric constant of approximately 400 in the temperature range of RT - 400 °C, especially for the BT-BMT films with x = 0.20-0.40.