High Performance 400 °C p+/n Ge Junctions Using Cryogenic Boron Implantation Bhatt, Piyush ; Swarnkar, Prashant ; Basheer, Firdous ; Hatem, Christopher ; Nainani, Aneesh ; Lodha, Saurabh Abstract Publication: IEEE Electron Device Letters Pub Date: July 2014 DOI: 10.1109/LED.2014.2326694 Bibcode: 2014IEDL...35..717B