A current modulation in the Gd2O3/Si/Gd2O3 quantum well structure as a mean to monitor oxygen vacancies
The Gd2O3 layer grown by electron beam evaporation system normally leads to oxygen deficient sites unless the oxygen partial pressure is provided. These oxygen vacancies were monitored through their current modulating effect. This modulation controlled the current within a Si well of the Gd2O3/Si/Gd2O3 quantum well structure through the migration of the oxygen vacancies. Such behavior were not found in the structure that contains far less oxygen vacancy such as SiO2/Si/SiO2 structure.