I-V and C-V characteristics of Y0.95Ca0.05MnO3/Si film
Abstract
In this study, we report the results of the electrical property measurements on Ca2+- doped Y0.95Ca0.05MnO3 (YCM) manganite thin film grown on n-type Si- substrate, using chemical solution deposition (CSD) technique. I-V characteristics show that, film exhibits rectifying behavior with high electroresistance(ER) which decreases with temperature. It is shown that, charge transport follows space charge limited current (SCLC) mechanism.
- Publication:
-
Solid State Physics
- Pub Date:
- April 2014
- DOI:
- 10.1063/1.4872940
- Bibcode:
- 2014AIPC.1591.1309D