We report on a study of the motional characteristics of positively charged muonium defect centers in In2O3 powder. Zero field muon spin relaxation (ZF-MuSR) measurements were taken from 2 K to 950 K. Results show the positively charged muonium defects occupying two states (Mu1 and Mu2) at low temperatures while a third state (Mu3) is introduced as the temperature is increased. Mu1 is occupied more heavily than Mu2 at low temperatures by a ratio of ∼8:1. The Mu1 state changes to the Mu2 state starting at 300 K with site change energy of 0.46±0.11 eV and is essentially not occupied above 500 K. The Mu2 state becomes diffusively mobile with a barrier of 0.78±0.07 eV at 350 K and begins trapping at Mu3 at 400 K with a capture energy of 0.56±0.019 eV. A metastable region is observed between 500 K and 650 K in which the ratio between Mu2 and Mu3 amplitudes and the hop rate of Mu2 are both roughly constant, implying a steady state trap and release balance between mobile Mu2 centers and the Mu3 trap state. Above 650 K, the muonium defects release from the Mu3 trap to the Mu2 diffusive state with a dissociation energy of 0.901±0.003 eV. The upper limit on the high temperature diffusion barrier is determined, from the Mu2 hop rate, to be 0.43±0.03 eV.