A 110 GHz LNA with 20dB gain and 4dB noise figure in an 0.13μm SiGe BiCMOS technology
Abstract
- Publication:
-
IEEE MTT-S International Microwave Symposium Digest
- Pub Date:
- June 2013
- DOI:
- 10.1109/MWSYM.2013.6697456
- Bibcode:
- 2013imsd.conf97456U