Strainengineering of graphene's electronic structure beyond continuum elasticity
Abstract
We present a new firstorder approach to strainengineering of graphene's electronic structure where no continuous displacement field u(x,y) is required. The approach is valid for negligible curvature. The theory is directly expressed in terms of atomic displacements under mechanical load, such that one can determine if mechanical strain is varying smoothly at each unit cell, and the extent to which sublattice symmetry holds. Since strain deforms lattice vectors at each unit cell, orthogonality between lattice and reciprocal lattice vectors leads to renormalization of the reciprocal lattice vectors as well, making the K and K' points shift in opposite directions. From this observation we conclude that no Kdependent gauges enter on a firstorder theory. In this formulation of the theory the deformation potential and pseudomagnetic field take discrete values at each graphene unit cell. We illustrate the formalism by providing straingenerated fields and local density of electronic states on graphene membranes with large numbers of atoms. The present method complements and goes beyond the prevalent approach, where strain engineering in graphene is based upon firstorder continuum elasticity.
 Publication:

Solid State Communications
 Pub Date:
 July 2013
 DOI:
 10.1016/j.ssc.2013.05.002
 arXiv:
 arXiv:1310.3622
 Bibcode:
 2013SSCom.166...70B
 Keywords:

 Condensed Matter  Mesoscale and Nanoscale Physics
 EPrint:
 7 pages, 6 figures. This article appeared as a Fasttrack Communication in May, 2013