Numerical model of parallel nanoFET on Coulomb blockade in M55 "magic" crystals
Abstract
A model of "parallel" metalgraphene quantum FET nanotransistor with a gate on the Coulomb blockade in the "magic" Ir_{55} nanocrystals is proposed and designed. This nanotransistor will have a speed of about 2.5 * 10^{11} Hz and size of 32x32x12 nm^{3}. It is shown that in this model of nanotransistor a sourcedrain potential is equal to 1.2 V, the threshold for the opening of the gate U_{G} is equal to 0.4 V and the total current in parallel connected 250 elementary singleelectron nanotransistors  crystals of Ir_{55} is 1.5 * 10^{5} A. This current is approximately equal to the current in experimental terahertz semiconductor nanotransistors. It is shown that gain coefficient for charge is K_{q} = 1, and the power gain is equal to K_{P} ~ 3. Such nanotransistor at using inductivecapacitive load could be an element of the integrated circuit  the generator of electromagnetic waves with a wavelength of 1.2 mm and power density ~ 10^{4} W/cm^{2}.
 Publication:

International Conference Micro and NanoElectronics 2012
 Pub Date:
 January 2013
 DOI:
 10.1117/12.2017306
 Bibcode:
 2013SPIE.8700E..17Z