64 μW pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions
Abstract
We present results on optimized growth temperatures and layer structure design of high mobility photoconductive Terahertz (THz) emitters based on molecular beam epitaxy grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS). The photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer and with a Golay cell. We measured a THz bandwidth in excess of 4 THz and average THz powers of up to 64 μW corresponding to an optical power-to-THz power conversion efficiency of up to 2 × 10-3.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 2013
- DOI:
- 10.1063/1.4817797
- Bibcode:
- 2013ApPhL.103f1103D
- Keywords:
-
- aluminium compounds;
- gallium arsenide;
- III-V semiconductors;
- indium compounds;
- molecular beam epitaxial growth;
- multilayers;
- photoconducting devices;
- photoconductivity;
- semiconductor epitaxial layers;
- semiconductor growth;
- semiconductor heterojunctions;
- submillimetre wave antennas;
- terahertz wave devices;
- terahertz wave spectra;
- 78.70.Gq;
- 81.15.Hi;
- 84.40.Ba;
- 68.55.ag;
- 72.40.+w;
- Microwave and radio-frequency interactions;
- Molecular atomic ion and chemical beam epitaxy;
- Antennas: theory components and accessories;
- Semiconductors;
- Photoconduction and photovoltaic effects