Near-field infrared absorption of plasmonic semiconductor microparticles studied using atomic force microscope infrared spectroscopy
Abstract
We report measurements of near-field absorption in heavily silicon-doped indium arsenide microparticles using atomic force microscope infrared spectroscopy (AFM-IR). The microparticles exhibit an infrared absorption peak at 5.75 μm, which corresponds to a localized surface plasmon resonance within the microparticles. The near-field absorption measurements agree with far-field measurements of transmission and reflection, and with results of numerical solutions of Maxwell equations. AFM-IR measurements of a single microparticle show the temperature increase expected from Ohmic heating within the particle, highlighting the potential for high resolution infrared imaging of plasmonic and metamaterial structures.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 2013
- DOI:
- Bibcode:
- 2013ApPhL.102o2110F
- Keywords:
-
- atomic force microscopy;
- elemental semiconductors;
- heavily doped semiconductors;
- III-V semiconductors;
- indium compounds;
- infrared spectra;
- localised states;
- plasmonics;
- silicon;
- surface plasmon resonance;
- 81.05.Ea;
- 73.20.Mf;
- 78.30.Fs;
- III-V semiconductors;
- Collective excitations;
- III-V and II-VI semiconductors