Lanthanide impurities in wide bandgap semiconductors: A possible roadmap for spintronic devices
Abstract
The electronic properties of lanthanide (from Eu to Tm) impurities in wurtzite gallium nitride and zinc oxide were investigated by first principles calculations, using an all electron methodology plus a Hubbard potential correction. The results indicated that the 4f-related energy levels remain outside the bandgap in both materials, in good agreement with a recent phenomenological model, based on experimental data. Additionally, zinc oxide doped with lanthanide impurities became an n-type material, showing a coupling between the 4f-related spin polarized states and the carriers. This coupling may generate spin polarized currents, which could lead to applications in spintronic devices.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2013
- DOI:
- 10.1063/1.4791787
- arXiv:
- arXiv:1307.3209
- Bibcode:
- 2013ApPhL.102f2101C
- Keywords:
-
- ab initio calculations;
- energy gap;
- europium;
- gallium compounds;
- Hubbard model;
- III-V semiconductors;
- II-VI semiconductors;
- SCF calculations;
- semiconductor doping;
- spin polarised transport;
- thulium;
- wide band gap semiconductors;
- zinc compounds;
- 61.72.uj;
- 71.15.Mb;
- 71.20.Nr;
- 72.25.Dc;
- 72.80.Ey;
- III-V and II-VI semiconductors;
- Density functional theory local density approximation gradient and other corrections;
- Semiconductor compounds;
- Spin polarized transport in semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- 11 pages, 3 figures