Phonon lasing in transport through double quantum dots
Abstract
An optical phonon laser is proposed using a double quantum dot (DQD) fabricated on semiconductor substrates. The DQD couples to two modes of LO phonons which work as a natural cavity. The pumping is realized by the electric current under a finite bias. We show that lasing takes place when the tunneling rate to external leads is much larger than the decay rate of phonons.
- Publication:
-
The Physics of Semiconductors
- Pub Date:
- December 2013
- DOI:
- 10.1063/1.4848384
- Bibcode:
- 2013AIPC.1566..259O