Nexus between coherent longitudinal-optical phonons and electronic diffusions in low-gap semiconductors
Abstract
We have studied the characteristics of longitudinal-optical-phonon--plasmon coupled (LOPC) mode as a function of thickness in InAs epilayers, ranging from 10 to 900 nm. The absence of LOPC modes in a scale less than exciton Bohr radius manifests the role of electron diffusion rather than the carrier screening via drift motion in surface depletion region.
- Publication:
-
The Physics of Semiconductors
- Pub Date:
- December 2013
- DOI:
- 10.1063/1.4848307
- Bibcode:
- 2013AIPC.1566..105M