Grid contact optimization of p-i-n GaN/InGaN solar cell

In this study, we have conducted numerical simulations to design the device contact pattern for the optimized performance of InGaN p-i-n solar cells. GaN/InGaN p-i-n solar cell studied with two different contact patterns, with grid pattern and without grid pattern. Solar characteristic parameters for both geometries are simulated with 1 × 1 mm² device areas while varying grid spacing and number of grids. An improved efficiency from 4.16 % to 6.34 % is observed with grid pattern and with optimized grid spacing of 225 microns.