Growth of silicon nanocrystallites in amorphous silicon carbide thin films by aluminum induced crystallization
Abstract
Growth of silicon nanocrystallites within the amorphous silicon carbide (a-SiC:H) thin films has been studied during stepwise vacuum annealing of the films deposited on bare quartz and 100 nm aluminum coated quartz substrates by plasma enhanced chemical vapour deposition (PECVD) method. Comparison of the effect of aluminum on the crystallization process with the corresponding reference films of a-SiC:H deposited on bare quartz by XRD and Raman scattering measurements shows that the aluminum induces the growth of silicon nanocrystallites at an enhanced rate.
- Publication:
-
Recent Trends in Applied Physics and Material Science: RAM 2013
- Pub Date:
- June 2013
- DOI:
- 10.1063/1.4810150
- Bibcode:
- 2013AIPC.1536..161K
- Keywords:
-
- annealing;
- crystallisation;
- hydrogen;
- nanofabrication;
- nanostructured materials;
- plasma CVD;
- Raman spectra;
- semiconductor thin films;
- silicon;
- silicon compounds;
- wide band gap semiconductors;
- X-ray diffraction;
- 52.77.Dq;
- 64.70.dg;
- 78.30.Hv;
- 78.66.Li;
- 81.07.Bc;
- 81.15.Gh;
- Plasma-based ion implantation and deposition;
- Crystallization of specific substances;
- Other nonmetallic inorganics;
- Other semiconductors;
- Nanocrystalline materials;
- Chemical vapor deposition