Photo induced effects in Bi/As2Se3 bilayer thin films
Abstract
Bilayer thin films of Bi/As2Se3 were prepared from Bi and As2Se3 by thermal evaporation technique under high vacuum. We have irradiated the films by using a laser of 532 nm wavelength to study photo diffusion of Bi into As2Se3. The diffusion of Bi into As2Se3 matrix increases the optical band gap producing photo bleaching effect. The changes were characterized by Fourier Transform Infrared and X-ray Photoelectron Spectroscopy (XPS) which shows the photo bleaching of the illuminated films. Optical constants were calculated by analyzing the transmission spectra. The core level peaks in XPS spectra give information about different bond formation.
- Publication:
-
Solid State Physics
- Pub Date:
- February 2013
- DOI:
- 10.1063/1.4791147
- Bibcode:
- 2013AIPC.1512..534N
- Keywords:
-
- arsenic compounds;
- bismuth;
- Dember effect;
- Fourier transform spectra;
- infrared spectra;
- optical constants;
- optical saturable absorption;
- photochemistry;
- thin films;
- vacuum deposition;
- X-ray photoelectron spectra;
- 68.55.at;
- 78.20.Ci;
- 78.30.Hv;
- 78.66.Nk;
- 79.60.Bm;
- 81.15.Dj;
- Other materials;
- Optical constants;
- Other nonmetallic inorganics;
- Insulators;
- Clean metal semiconductor and insulator surfaces