Defect annealing in Sb/Sn implanted diamond investigated with 119Sn Mössbauer spectroscopy
Abstract
The annealing of defects in Sb/Sn implanted diamond has been studied in 119Sn Mössbauer spectroscopy following the implantation of radioactive parent isotopes 119Xe and 119mSn. Our results show that after annealing above 1300 K, 40% of the implanted ions are located at or near regular sites in the lattice. Significant implantation induced defects however remain.
- Publication:
-
Physica B Condensed Matter
- Pub Date:
- August 2012
- DOI:
- 10.1016/j.physb.2011.08.041
- Bibcode:
- 2012PhyB..407.2923B