As the Si counterpart of graphene, silicene may be defined as an at least partially sp2-hybridized, atom-thick honeycomb layer of Si that possesses π-electronic bands. Here we show that two-dimensional, epitaxial silicene forms through surface segregation on zirconium diboride thin films grown on Si wafers. A particular buckling of silicene induced by the epitaxial relationship with the diboride surface leads to a direct π-electronic band gap at the Γ point. These results demonstrate that the buckling and thus the electronic properties of silicene are modified by epitaxial strain.
Physical Review Letters
- Pub Date:
- June 2012
- Nanoscale materials;
- Scanning tunneling microscopy;
- Electronic structure of nanoscale materials: clusters nanoparticles nanotubes and nanocrystals;
- New materials: theory design and fabrication