Characterization of M-π-n CdTe pixel detectors coupled to HEXITEC readout chip

Segmentation of the anode-side of an M-π-n CdTe diode, where the pn-junction is diffused into the detector bulk, produces large improvements in the spatial and energy resolution of CdTe pixel detectors. It has been shown that this fabrication technique produces very high inter-pixel resistance and low leakage currents are obtained by physical isolation of the pixels of M-π-n CdTe detectors. In this paper the results from M-π-n CdTe detectors stud bonded to a spectroscopic readout ASIC are reported. The CdTe pixel detectors have 250 μm pitch and an area of 5 × 5 mm² with thicknesses of 1 and 2 mm. The polarization and energy resolution dependence of the M-π-n CdTe detectors as a function of detector thickness are discussed.