The SiGe heterostructures can play a role that drastically enhances the carrier mobility of SiGe heterodevices, such as strained Si metal oxide semiconductor field effect transistors. However, it is difficult to access the both issues, that is, the propagation of the dislocation and thermal reliability of annealed SiGe films. In this study, we used ultrahigh-vacuum chemical vapor deposition to grow Si0.8Ge0.2 films (ca. 200 nm thick for heteroepitaxy) epitaxially on bulk Si. The samples were subsequently furnace-crystallized at temperatures of 800, 900, and 1000 °C. We used nanoscratch techniques to determine the frictional characteristics of the SiGe epilayers under various ramping loads and employed atomic force microscopy to examine their morphologies after scratching. From our investigation of the pile-up phenomena, we observed significant cracking dominating on both sides of the scratches on the films. The SiGe epilayers films that had undergone annealing treatment possessed lower coefficients of friction, suggesting higher shear resistances.