Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor
Abstract
A gate-insulated vacuum channel transistor was fabricated using standard silicon semiconductor processing. Advantages of the vacuum tube and transistor are combined here by nanofabrication. A photoresist ashing technique enabled the nanogap separation of the emitter and the collector, thus allowing operation at less than 10 V. A cut-off frequency fT of 0.46 THz has been obtained. The nanoscale vacuum tubes can provide high frequency/power output while satisfying the metrics of lightness, cost, lifetime, and stability at harsh conditions, and the operation voltage can be decreased comparable to the modern semiconductor devices.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 2012
- DOI:
- 10.1063/1.4717751
- Bibcode:
- 2012ApPhL.100u3505H
- Keywords:
-
- elemental semiconductors;
- high-frequency effects;
- MOSFET;
- nanoelectronics;
- nanofabrication;
- photoresists;
- silicon;
- vacuum tubes;
- 85.30.Tv;
- 85.35.-p;
- Field effect devices;
- Nanoelectronic devices