Engineering nonlinearity into memristors for passive crossbar applications
Abstract
Although TaOx memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO2-x/TaOx oxide heterostructure incorporated into a 50 nm× 50 nm memristor displays a very large nonlinearity such that I(V/2) ≈ I(V)/100 for V ≈ 1 volt, which is caused by current-controlled negative differential resistance in the device.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2012
- DOI:
- 10.1063/1.3693392
- Bibcode:
- 2012ApPhL.100k3501J
- Keywords:
-
- memristors;
- random-access storage;
- tantalum compounds;
- 84.32.Ff;
- 84.30.Sk;
- Conductors resistors;
- Pulse and digital circuits