Exciton effects in boron-nitride (BN) nanotubes
Abstract
Exciton effects are studied in single-wall boron-nitride nanotubes. The Coulomb interaction dependence of the band gap, the optical gap, and the binding energy of excitons are discussed. The optical gap of the (5,0) nanotube is about 6eV at the onsite interaction U=2t with the hopping integral t=1.1eV. The binding energy of the exciton is 0.50eV for these parameters. This energy agrees well with that of other theoretical investigations. We find that the energy gap and the binding energy are almost independent of the geometries of nanotubes. This novel property is in contrast with that of the carbon nanotubes which show metallic and semiconducting properties depending on the chiralities.
- Publication:
-
International Conference of Computational Methods in Sciences and Engineering 2009: (ICCMSE 2009)
- Pub Date:
- December 2012
- DOI:
- 10.1063/1.4771767
- Bibcode:
- 2012AIPC.1504..597H
- Keywords:
-
- binding energy;
- boron compounds;
- energy gap;
- excitons;
- III-V semiconductors;
- optical constants;
- semiconductor nanotubes;
- wide band gap semiconductors;
- 71.35.-y;
- 73.22.-f;
- 78.20.Ci;
- 78.67.Ch;
- Excitons and related phenomena;
- Electronic structure of nanoscale materials: clusters nanoparticles nanotubes and nanocrystals;
- Optical constants;
- Nanotubes