Half-metallic ferromagnetism in MgS0.875X0.125 (X = C, Si, Ge and Sn): A first principle approach
Abstract
The possibility of half-metallic ferromagnetism in MgS doped with 12.5% concentration of C, Si, Ge and Sn was carried out by means of full-potential linearized augmented plane wave (FP-LAPW) method. The Generalized Gradient Approximation (GGA) and Local Spin Density Approximation (LSDA) were used for exchange-correlation corrections. The LSDA calculation shows that only C- doping induces half-metallic ferromagnetism and Si- doping shows nearly ferromagnet in MgS others do not exhibit ferromagnetism. However, GGA calculation shows C- doping shows nearly half-metallic property, Si- and Ge- doping exhibit ferromagnetism. While Sn- cannot induce ferromagnetism in host material. The ferromagnetism mainly arises from spin polarization of 2p states of dopant.
- Publication:
-
Solid State Physics
- Pub Date:
- June 2012
- DOI:
- 10.1063/1.4710439
- Bibcode:
- 2012AIPC.1447.1197Y
- Keywords:
-
- ab initio calculations;
- APW calculations;
- density functional theory;
- doping;
- Fermi level