Indications of an Electronic Phase Transition in 2D YBa2Cu3O7-x Induced by Electrostatic Doping
Abstract
We successfully tuned an underdoped ultrathin YBa2Cu3O7-x film into the overdoped regime by means of electrostatic doping using an ionic liquid as a dielectric material. This process proved to be reversible. Transport measurements showed a series of anomalous features compared to chemically doped bulk samples and a different two-step doping mechanism for electrostatic doping was revealed. The normal resistance increased with carrier concentration on the overdoped side and the high temperature (180 K) Hall number peaked at a doping level of p$\sim$0.15. These anomalous behaviors suggest that there is an electronic phase transition in the Fermi surface around the optimal doping level.
- Publication:
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arXiv e-prints
- Pub Date:
- July 2011
- arXiv:
- arXiv:1108.0083
- Bibcode:
- 2011arXiv1108.0083L
- Keywords:
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- Condensed Matter - Superconductivity;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 4 pages,3 figures