A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier
Abstract
A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3 μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating (SI) 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range, the single chip amplifier demonstrates a maximum power of 38 dBm (6.3 W), a peak power added efficiency (PAE) of 24.2% and linear gain of 6.4 to 7.5 dB under a 10% duty pulse condition when operated at Vds = 25 V and Vgs = -4 V. At these power levels, the amplifier exhibits a power density in excess of 5 W/mm.
- Publication:
-
Journal of Semiconductors
- Pub Date:
- August 2011
- DOI:
- 10.1088/1674-4926/32/8/085001
- Bibcode:
- 2011JSemi..32h5001Q