Large, integral AgGa1-xInxSe2 (x=0.6, 0.8) single crystals were grown from a melt. The polycrystalline charges were successfully synthesized from high purity elemental starting materials by the vapor transport method with the melt and temperature oscillation. The crystallization processes were carried out in two-layer quartz ampoules with ampoule rotation and the real-time temperature compensation technique. The quality of the as-grown crystals was characterized using a microscope, XRD, IR and vis-NIR spectrophotometers, etc. Cleavage faces of (1 1 2) were found, and high transmittance of the crystals in the mid-near IR region was revealed. The absorption edges of the materials are near 905 and 958 nm, and the calculated band gaps are about 1.37 and 1.29 eV. All the measurements confirmed the good quality of the grown crystals.