Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method
Electrical properties of P-doped Zn1-xMgxTe have been clarified as a function of measurement temperature. The activation energy of P-acceptor, and donor and acceptor concentrations of P-doped Zn1-xMgxTe crystals were derived from a carrier concentration analysis. The activation energy becomes higher with increasing Mg content, in agreement with the photoluminescence properties. The mobility at low temperature tends to decrease with an increase in Mg content. A strong emission band originating from interband transition appears clearly at room temperature in P-doped Zn1-xMgxTe with any Mg content, though broad luminescence is found for x=0.11 in the wavelength region from 650 to 720 nm.