Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition
Abstract
We synthesize large-area graphene via atmospheic-pressure (AP) chemical vapor deposition (CVD) on copper, and transfer to SiO2 wafers. In contrast to low-pressure CVD on copper, optical contrast and atomic force microscopy measurements show AP-CVD graphene contains significant multi-layer areas. Raman spectroscopy always shows a single Lorentzian 2D peak, however systematic differences are observed in the 2D peak energy, width, and intensity for single- and multi-layer regions. We conclude that graphene multi-layers grown by AP-CVD on Cu are rotationally disordered.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- July 2011
- DOI:
- arXiv:
- arXiv:1011.1683
- Bibcode:
- 2011JAP...110a3720L
- Keywords:
-
- atomic force microscopy;
- chemical vapour deposition;
- graphene;
- multilayers;
- Raman spectra;
- silicon compounds;
- 68.55.A-;
- 78.30.Fs;
- 68.65.Ac;
- 68.37.Ps;
- 81.15.Gh;
- Nucleation and growth;
- III-V and II-VI semiconductors;
- Multilayers;
- Atomic force microscopy;
- Chemical vapor deposition;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 13 pages, 4 figures + Supplemental Material of 11 pages, 4 figures