Defect properties of ZnO and ZnO:P microwires
Abstract
We report on the defect properties of nominally undoped and phosphorus-doped ZnO microwires grown by carbothermal vapor phase transport. Cathodoluminescence measurements show very narrow (≈300 μeV), donorlike transitions in the UV spectral range. A recombination-line at 3.356 eV, previously assigned to phosphorus acceptors, is observed in our undoped ZnO. Thus the correlation of this recombination process and possible acceptor doping can be excluded. Hall effect measurements confirmed these findings and revealed n-type conductivity in both ZnO and high quality ZnO:P microwires.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- January 2011
- DOI:
- 10.1063/1.3530610
- Bibcode:
- 2011JAP...109a3712D
- Keywords:
-
- cathodoluminescence;
- crystal defects;
- Hall effect;
- II-VI semiconductors;
- phosphorus;
- semiconductor growth;
- vapour phase epitaxial growth;
- wide band gap semiconductors;
- wires;
- zinc compounds;
- 71.55.Gs;
- 81.05.-t;
- 81.10.Bk;
- 78.60.Hk;
- 78.66.Hf;
- II-VI semiconductors;
- Specific materials: fabrication treatment testing and analysis;
- Growth from vapor;
- Cathodoluminescence ionoluminescence;
- II-VI semiconductors