Enhanced tunneling properties of band-engineered (HfO2)x(SiO2)1-x/SiO2 double dielectric layers for non-volatile flash memory device
Abstract
- Publication:
-
Current Applied Physics
- Pub Date:
- March 2011
- DOI:
- 10.1016/j.cap.2010.11.118
- Bibcode:
- 2011CAP....11E..16H