Auger recombination in GaInN/GaN quantum well laser structures
Abstract
Nonradiative loss processes are a major concern in nitride-based light emitting devices. Utilizing optical gain measurements on GaInN/GaN/AlGaN laser structures, we have studied the dependence of the total recombination rate on excess carrier density, up to rather high densities. From a detailed quantitative analysis, we find a room-temperature Auger recombination coefficient of 1.8 ± 0.2 × 10-31 cm6/s in the bandgap range 2.5 - 3.1 eV, considerably lower than previous experimental estimates. Thus, Auger recombination is expected to be significant for laser diodes, while it is not likely to be a major factor for the droop observed in light-emitting diodes.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2011
- DOI:
- Bibcode:
- 2011ApPhL..99c1106B
- Keywords:
-
- aluminium compounds;
- Auger effect;
- carrier density;
- gallium compounds;
- III-V semiconductors;
- light emitting diodes;
- optical properties;
- optical variables measurement;
- quantum well lasers;
- 42.55.Px;
- 73.50.-h;
- 73.63.Hs;
- 78.66.-w;
- 85.60.Jb;
- Semiconductor lasers;
- laser diodes;
- Electronic transport phenomena in thin films;
- Quantum wells;
- Optical properties of specific thin films;
- Light-emitting devices