Tunable electronic transport properties of DyScO3/SrTiO3 polar heterointerface
Abstract
Electronic transport properties of DyScO3/SrTiO3 polar heterointerface grown at different oxygen pressures are studied. This DyScO3/SrTiO3 polar heterointerface exhibits much higher charge mobility, up to 104 cm2 V-1 s-1, compared to the LaAlO3/SrTiO3 system due to relatively lower lattice mismatch between the film and substrate. More significantly, the DyScO3 film deposited under 10-4 mbar oxygen pressure presents an interfacial metal-to-semiconductor conducting mechanism transition at 90 K. Field effect transport measurement results reveal that this transition can be modulated by field effect through controlling the electron doping level of the interface originated from interfacial electronic reconstruction.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2011
- DOI:
- 10.1063/1.3570694
- Bibcode:
- 2011ApPhL..98l2108L
- Keywords:
-
- carrier mobility;
- doping profiles;
- dysprosium compounds;
- insulating thin films;
- interface phenomena;
- interface states;
- metal-insulator transition;
- strontium compounds;
- 73.40.-c;
- 72.60.+g;
- 71.30.+h;
- 73.20.At;
- 73.61.Ng;
- 73.50.Dn;
- Electronic transport in interface structures;
- Mixed conductivity and conductivity transitions;
- Metal-insulator transitions and other electronic transitions;
- Surface states band structure electron density of states;
- Insulators;
- Low-field transport and mobility;
- piezoresistance