Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films
Abstract
The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 °C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperature measurements in films grown on both substrates, with charge transport in-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically driven memristive behavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphic devices.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2011
- DOI:
- arXiv:
- arXiv:1101.3538
- Bibcode:
- 2011ApPhL..98a2105H
- Keywords:
-
- compressive strength;
- epitaxial growth;
- epitaxial layers;
- metal-insulator transition;
- samarium compounds;
- sputter deposition;
- X-ray diffraction;
- 73.61.Ng;
- 68.60.Bs;
- 81.40.Lm;
- 68.55.at;
- 81.15.Cd;
- 71.30.+h;
- 72.60.+g;
- Insulators;
- Mechanical and acoustical properties;
- Deformation plasticity and creep;
- Other materials;
- Deposition by sputtering;
- Metal-insulator transitions and other electronic transitions;
- Mixed conductivity and conductivity transitions;
- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- doi:10.1063/1.3536486