A new technique has been developed to measure the carrier mobility and lifetime based on current transients produced by a sub-picosecond laser pulse. The theoretical model we proposed agrees well with the experimental data. This technique has been applied to the material libraries fabricated by the combinatorial growth technique.
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
- Pub Date:
- December 2011
- Hall effect;
- Galvanomagnetic and other magnetotransport effects;
- Pattern formation in reactions with diffusion flow and heat transfer;
- Photoconduction and photovoltaic effects