A High Throughput Approach to Measuring Carrier Mobility and Lifetime of Thin Film Semiconductors
Abstract
A new technique has been developed to measure the carrier mobility and lifetime based on current transients produced by a sub-picosecond laser pulse. The theoretical model we proposed agrees well with the experimental data. This technique has been applied to the material libraries fabricated by the combinatorial growth technique.
- Publication:
-
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
- Pub Date:
- December 2011
- DOI:
- 10.1063/1.3666743
- Bibcode:
- 2011AIPC.1399.1061M
- Keywords:
-
- Hall effect;
- electrodes;
- diffusion;
- photoconductivity;
- 72.20.My;
- 82.45.Fk;
- 82.40.Ck;
- 73.50.Pz;
- Galvanomagnetic and other magnetotransport effects;
- Electrodes;
- Pattern formation in reactions with diffusion flow and heat transfer;
- Photoconduction and photovoltaic effects