Study on transparent and flexible memory with metal-oxide nanocrystals
Abstract
A memory device with the In2O3 nanocrystals embedded in biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer was fabricated, and its electrical and optical properties were evaluated. The In2O3 nanocrystals showed an irregular spherical shape with the average size and density of about 7 nm and 6×1011 cm-2, respectively. In the structure of BPDA-PDA polyimide/In2O3 nanocrystals/ZnO/ITO/sapphire, a current bistability by difference resistance appeared in the sweep voltage rage from -7 V to 7 V. Then, the transmittance efficiency of this was measured about 80 % between 440 nm to 800 nm by the ultraviolet-visible transmittance spectra.
- Publication:
-
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
- Pub Date:
- December 2011
- DOI:
- 10.1063/1.3666652
- Bibcode:
- 2011AIPC.1399..869L
- Keywords:
-
- nanostructured materials;
- resistance (electric);
- hysteresis;
- field effect devices;
- 78.67.Bf;
- 84.37.+q;
- 75.60.Ej;
- 85.30.Tv;
- Nanocrystals and nanoparticles;
- Measurements in electric variables;
- Magnetization curves hysteresis Barkhausen and related effects;
- Field effect devices