Real-space mapping of compressible and incompressible strips by a near-field scanning optical microscope
Abstract
Compressible and incompressible strips formed near the boundary of a two-dimensional electron system were mapped out by near-field scanning optical microscope at 230 mK. Dilution-refrigerator based near-field scanning optical microscope enables us to investigate spatial properties of the electrons in semiconductor nanostructures with a subwavelength spatial resolution. We obtain real-space mapping of photovoltage in the vicinity of the edge of Hall-bar, which reflects the local chemical potential determined by the distribution of the compressible and incompressible strips.
- Publication:
-
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
- Pub Date:
- December 2011
- DOI:
- 10.1063/1.3666522
- Bibcode:
- 2011AIPC.1399..603I
- Keywords:
-
- metallisation;
- superconducting magnets;
- voltage measurement;
- amplifiers;
- 85.40.Ls;
- 84.71.Ba;
- 84.37.+q;
- 84.30.Le;
- Metallization contacts interconnects;
- device isolation;
- Superconducting magnets;
- magnetic levitation devices;
- Measurements in electric variables;
- Amplifiers