Electron g-factor in bulk Ga1-xInxAsySb1-y/GaSb quaternary alloy and in GaSb/Ga1-xInxAsySb1-y/GaSb Spherical quantum dots

Secure quantum communications require an entanglement-preserving photo-detector in which quantum information is transmitted by photon polarization through an mid infrared optical fiber system and then transferred to electron spin in a optoelectronic semiconductor device. Using interpolation scheme we have investigated the electron g-factor in bulk Ga_1-xIn_xAs_ySb_1-y quaternary alloy matched to GaSb as a function of Indium and Arsenic concentration on the complete range 0≤x,y≤1. A specific g-factor as a function of the radius in a spherical GaSb/Ga_1-xIn_xAs_ySb_1-y/GaSb quantum dot heterostructure is calculated. Furthermore, we present calculations of the energy states including the Zeeman effect on the electrons confined in quaternary heterostructure quantum dots, with a parabolic confining potential under applied magnetic fields. Our calculations have been worked out by using interpolating methods to find the band gap as a function of the Indium concentration in order to determine the conduction band-offset at room temperature in GaSb/Ga_1-xIn_xAs_ySb_1-y/GaSb heterostructure, within the effective-mass approximation. Experimental or theoretical electron g-factor, spin-orbit splitting ∆_so, _{and coupling matrix elements Ep = (2/m0})|<S|px|X>|² value between the states of the lowest conduction band Γ6 and the upper valence bands Γ₈ for Ga_1-xIn_xAsySb1-y/GaSb quaternary alloy are not readily available. Our predictions show that electron g-factor values are in the range between the electron g-factor measured in bulk GaSb when x→0 (g = -9.25) and that measured in InAs when x→1 (g = -18.08), but there is a remarkable minimum in the g-factor value (g≃-23.14) at x≃0.67.