Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate
Abstract
We have studied the residual strain or stress in semi-polar (1-101) GaN and conventional (0001) GaN by means of Raman spectroscopic analyses. As the results, it was found that the strain tensor for a (1-101) GaN grown on (001) Si was smaller than that for a (0001) GaN grown on (111) Si with good agreement of X-ray diffraction analyses.
- Publication:
-
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
- Pub Date:
- December 2011
- DOI:
- 10.1063/1.3666474
- Bibcode:
- 2011AIPC.1399..503S
- Keywords:
-
- X-ray diffraction;
- band structure;
- vapor phase epitaxial growth;
- stress-strain relations;
- 61.05.cp;
- 71.20.Nr;
- 81.15.Kk;
- 81.40.Jj;
- X-ray diffraction;
- Semiconductor compounds;
- Vapor phase epitaxy;
- growth from vapor phase;
- Elasticity and anelasticity stress-strain relations