Side-gate controlled electrical properties of superconducting quantum interference device coupled with self-assembled InAs quantum dot
Abstract
We report experimental results of electrical transport properties on superconducting quantum interference device (SQUID) coupled with InAs self-assembled quantum dot (SAQD) which has a unique structural zero-dimensionality. We successfully fabricated SAQD-SQUID with two side gates by means of AFM and e-beam lithography. The side-gate controlled supercurrent and π junction transition were demonstrated and such results may provide valuable information for the development of quantum information device by employing InAs SAQD.
- Publication:
-
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
- Pub Date:
- December 2011
- DOI:
- 10.1063/1.3666414
- Bibcode:
- 2011AIPC.1399..383K
- Keywords:
-
- self-assembly;
- quantum dots;
- electron beam lithography;
- atomic force microscopy;
- 81.16.Dn;
- 81.07.Ta;
- 85.40.Hp;
- 68.37.Ps;
- Self-assembly;
- Quantum dots;
- Lithography masks and pattern transfer;
- Atomic force microscopy