Temperature Dependent Anomalous Hall Effects in DMS Zn(Fe, Al)O Epitaxial Thin Film
Abstract
The epitaxial film of ZnO doped with magnetic ion Fe and 1% Al shows clear evidence of room temperature ferromagnetic ordering. The Hall Effect measurements have been carried out using different isothermal temperatures down to 1.6 K. The film shows saturating nature of our Hall resistivity at higher field. Theory of the anomalous Hall effect in n-type magnetic semiconductors have been employed and the relative role of side-jump and skew-scattering mechanisms assessed for Zn(Fe, Al)O sample have been explored.
- Publication:
-
Solid State Physics
- Pub Date:
- July 2011
- DOI:
- 10.1063/1.3606220
- Bibcode:
- 2011AIPC.1349.1045C
- Keywords:
-
- Hall effect;
- spin arrangements;
- magnetic moments;
- spin polarisation;
- electron;
- 73.50.Jt;
- 75.25.-j;
- 75.20.Hr;
- 72.25.Dc;
- Galvanomagnetic and other magnetotransport effects;
- Local moment in compounds and alloys;
- Kondo effect valence fluctuations heavy fermions;
- Spin polarized transport in semiconductors