Hot Electron Energy Loss Rate in GaN/AlGaN Heterosructures
Abstract
Hot electron energy loss rate P due to acoustic phonons is studied theoretically at low electron temperatures Te(<20 K). Electron-acoustic phonon coupling is considered via screened acoustic deformation potential and piezoelectric field. Numerical calculations are made for wurtzite Al0.15Ga0.85N/AlN/GaN and Al0.83In0.17N/AlN/GaN heterojunctions and compared with the experimental results. The P vs Te behavior is agreeing reasonably well but differing in magnitude. The full form of P improves agreement rather than Bloch-Gruinesen power law formula which is often used in the literature.
- Publication:
-
Solid State Physics
- Pub Date:
- July 2011
- DOI:
- 10.1063/1.3606162
- Bibcode:
- 2011AIPC.1349..929K
- Keywords:
-
- energy loss of particles;
- semiconductor materials;
- dielectric function;
- piezoelectricity;
- 61.85.+p;
- 74.78.Fk;
- 77.22.Ch;
- 77.84.Bw;
- Channeling phenomena;
- Multilayers superlattices heterostructures;
- Permittivity;
- Elements oxides nitrides borides carbides chalcogenides etc.