Effect Of Illumination On Silicon Based MIS Structure By E-Beam Technique For IC Manufacturing Technology
Abstract
Fabrication, characterization and effect of illumination of silicon (Si) based MIS devices is reported in this paper. Experiments were conducted on 2 inches diameter crystalline Si wafer having resistivity of the order 1.5±0.5 ohm-cm, and thickness 300±25 μm. Device was fabricated on <111> orientation. The wafer was chemically processed by using the standard methods to eliminate all types of impurities from its surface till the wafer surface becomes hydrophobic. The SiO2 layer was then grown on the preferred surface. High pure Al was evaporated over the device surfaces using e-beam technique. Electrical characterizations were carried out using these Al contact prepared through the selected mask. Current-Voltage (IV) characteristics both at dark and light of the device were drawn using various contacts areas. Studies were also conducted by introducing semi insulating SnO2 layer in between the Si and Al. Introduction of semi-insulating layer changes the device performance at illumination condition. The present studies may be very much useful in fabricating Si based charge couple devices for various applications.
- Publication:
-
American Institute of Physics Conference Series
- Pub Date:
- January 2011
- DOI:
- 10.1063/1.3552449
- Bibcode:
- 2011AIPC.1315..247P
- Keywords:
-
- MIS devices;
- integrated circuits;
- sensors;
- electric;
- coatings;
- 73.40.Qv;
- 85.40.Bh;
- 82.47.Rs;
- 42.79.Wc;
- Metal-insulator-semiconductor structures;
- Computer-aided design of microcircuits;
- layout and modeling;
- Electrochemical sensors;
- Optical coatings