Dirac fourpotential tuningsbased quantum transistor utilizing the Lorentz force
Abstract
We propose a mathematical model of \textit{quantum} transistor in which bandgap engineering corresponds to the tuning of Dirac potential in the complex fourvector form. The transistor consists of $n$relativistic spin qubits moving in \textit{classical} external electromagnetic fields. It is shown that the tuning of the direction of the external electromagnetic fields generates perturbation on the potential temporally and spatially, determining the type of quantum logic gates. The theory underlying of this scheme is on the proposal of the intertwining operator for Darboux transfomations on onedimensional Dirac equation amalgamating the \textit{vectorquantum gates duality} of Pauli matrices. Simultaneous transformation of qubit and energy can be accomplished by setting the $\{\textit{control, cyclic}\}$operators attached on the coupling between onequbit quantum gate: the chose of \textit{cyclic}operator swaps the qubit and energy simultaneously, while \textit{control}operator ensures the energy conservation.
 Publication:

arXiv eprints
 Pub Date:
 March 2010
 arXiv:
 arXiv:1003.4590
 Bibcode:
 2010arXiv1003.4590T
 Keywords:

 Quantum Physics
 EPrint:
 23 pages, 10 figures: Typo corrections. A new Subsection with massless Diracfermions in a uniform magnetic field is included