Dislocation-induced composition profile in alloy semiconductors
Abstract
We present a novel computational method by combining the finite element method and the method of moving asymptotes to study the dislocation-induced composition profile in alloy semiconductors. Segregated cylindrical nanoscale regions appear around the dislocation core. We find that the dominant driving force of non-uniform composition is strain contribution. Moreover, the method can be applied to the dislocated nanoscale heterostructures which are inaccessible by atomic treatment.
- Publication:
-
Solid State Communications
- Pub Date:
- August 2010
- DOI:
- 10.1016/j.ssc.2010.05.023
- Bibcode:
- 2010SSCom.150.1275Y
