The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. Treating the scattering off the impurity in the s-wave approximation, we calculate the impurity correction to the cumulant generating function. This correction is universal provided the impurity strength is tuned to a resonant value. In particular, the conductance of the sample acquires a correction of 16e2/(π2h) per resonant impurity.
Physical Review Letters
- Pub Date:
- February 2010
- Electronic transport in nanoscale materials and structures;
- Electronic structure of nanoscale materials: clusters nanoparticles nanotubes and nanocrystals;
- Condensed Matter - Mesoscale and Nanoscale Physics
- 11 pages, 6 figures