Dipole trap model for the metal-insulator transition in gated silicon-inversion layers
Abstract
In order to investigate the metal-insulator transition in high-mobility Si-metal-oxide-semiconductor structures, we have precised and further developed the dipole trap model as originally proposed by Altshuler and Maslov [Phys. Rev. Lett. 82, 145 (1999)]10.1103/PhysRevLett.82.145. Our additional numerical treatment enables us to drop several approximations and to introduce a limited spatial depth of the trap states inside the oxide as well as to include a distribution of trap energies. Depending on the type and width of distribution, the metallic state appears more or less pronounced as observed in experiments on samples with different quality.
- Publication:
-
Physical Review B
- Pub Date:
- November 2010
- DOI:
- 10.1103/PhysRevB.82.205310
- arXiv:
- arXiv:1001.0205
- Bibcode:
- 2010PhRvB..82t5310H
- Keywords:
-
- 71.30.+h;
- 73.40.Qv;
- 72.10.Fk;
- Metal-insulator transitions and other electronic transitions;
- Metal-insulator-semiconductor structures;
- Scattering by point defects dislocations surfaces and other imperfections;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Disordered Systems and Neural Networks
- E-Print:
- 16 pages, 10 figures, submitted